Molecular-jet chemical vapor deposition of SiC

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SiC films have been deposited by molecular-jet chemical vapor deposition (MJCVD) on Si(001) substrates. Methylsilane (MS) diluted in He was used as a precursor for deposition under conditions which produced a MS molecular beam with 0.365 eV translational energy. Films grown at temperatures between 1000 and 1150 C and above {approx}1200 C were single crystal as judged by electron channeling, while those grown at intermediate temperatures were polycrystalline. Films grown at lower temperatures generally had a smoother surface morphology for moderate thicknesses, although all films showed at least some degree of faceting. The best thick films, up to 4 {mu}m, ... continued below

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5 p.

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Lubben, D.; Jellison, G.E. & Modine, F.A. September 1, 1995.

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Description

SiC films have been deposited by molecular-jet chemical vapor deposition (MJCVD) on Si(001) substrates. Methylsilane (MS) diluted in He was used as a precursor for deposition under conditions which produced a MS molecular beam with 0.365 eV translational energy. Films grown at temperatures between 1000 and 1150 C and above {approx}1200 C were single crystal as judged by electron channeling, while those grown at intermediate temperatures were polycrystalline. Films grown at lower temperatures generally had a smoother surface morphology for moderate thicknesses, although all films showed at least some degree of faceting. The best thick films, up to 4 {mu}m, were obtained for substrate temperatures of {approx}1210 C under flow conditions which produced a deposition rate of {approx}1200 {angstrom} per minute.

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5 p.

Notes

OSTI as DE96005419

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  • 6. international conference on silicon carbide and related materials, Kyoto (Japan), 18-21 Sep 1995

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  • Other: DE96005419
  • Report No.: CONF-950982--2
  • Grant Number: AC05-84OR21400
  • Office of Scientific & Technical Information Report Number: 197839
  • Archival Resource Key: ark:/67531/metadc669369

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  • September 1, 1995

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Jan. 19, 2016, 8:20 p.m.

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Lubben, D.; Jellison, G.E. & Modine, F.A. Molecular-jet chemical vapor deposition of SiC, article, September 1, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc669369/: accessed August 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.