Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

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Description

Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, high-ion density etching or deposition processes. In this review the authors compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same single-wafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

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14 p.

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Constantine, C.; Johnson, D. & Barratt, C. July 1, 1996.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, high-ion density etching or deposition processes. In this review the authors compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same single-wafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

Physical Description

14 p.

Notes

OSTI as DE96012938

Source

  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96012938
  • Report No.: SAND--96-1728C
  • Report No.: CONF-960401--64
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/266733 | External Link
  • Office of Scientific & Technical Information Report Number: 266733
  • Archival Resource Key: ark:/67531/metadc669114

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • July 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

Description Last Updated

  • June 23, 2016, 10:09 a.m.

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Constantine, C.; Johnson, D. & Barratt, C. Parametric study of compound semiconductor etching utilizing inductively coupled plasma source, report, July 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc669114/: accessed November 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.