Large dynamic range, picosecond resolution radiation detection based on low-temperature-grown epitaxial GaAs films

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Description

This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The original objective of the project was to develop ultrafast radiation detectors based on GaAs epilayers grown by molecular beam epitaxy at 200--300 C. Low temperature (LT) GaAs is known to have subpicosecond carrier lifetimes; therefore, detectors based on this material should have response times of the order of 1 ps, more than an order of magnitude faster than any existing high energy radiation detectors. During the course of the project it became clear that an adequate material structure ... continued below

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7 p.

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Watkins, D.E.; Wagner, R.S.; Khachaturyan, K.K. & Joseph, J.R. March 1, 1996.

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Description

This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The original objective of the project was to develop ultrafast radiation detectors based on GaAs epilayers grown by molecular beam epitaxy at 200--300 C. Low temperature (LT) GaAs is known to have subpicosecond carrier lifetimes; therefore, detectors based on this material should have response times of the order of 1 ps, more than an order of magnitude faster than any existing high energy radiation detectors. During the course of the project it became clear that an adequate material structure could not be attained, and therefore the emphasis of the project changed from LT-GaAs to polycrystalline chemical-vapor-deposited (CVD) diamond. This change resulted in demonstrating the feasibility of diamond microstrip detectors for high luminosity colliders for the first time. At the same time, they have advanced the state-of-the-art in diamond film quality.

Physical Description

7 p.

Notes

INIS; OSTI as DE96006147

Source

  • Other Information: PBD: [1996]

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  • Other: DE96006147
  • Report No.: LA-UR--96-751
  • Grant Number: W-7405-ENG-36
  • DOI: 10.2172/206602 | External Link
  • Office of Scientific & Technical Information Report Number: 206602
  • Archival Resource Key: ark:/67531/metadc668819

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • March 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Feb. 29, 2016, 3:53 p.m.

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Watkins, D.E.; Wagner, R.S.; Khachaturyan, K.K. & Joseph, J.R. Large dynamic range, picosecond resolution radiation detection based on low-temperature-grown epitaxial GaAs films, report, March 1, 1996; New Mexico. (digital.library.unt.edu/ark:/67531/metadc668819/: accessed November 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.