Accelerated life-time testing and resistance degradation of thin-film decoupling capacitors

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Resistance degradation in PZT thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. It is found that the mean-time-to-failure (life-time or t{sub f}) of the capacitors shows a power law dependence on applied voltage of he form t{sub f} {proportional_to} V{sup {minus}n} (n {approximately} 4--5). The capacitor life-time also exhibits a temperature dependence of the form t{sub f} {proportional_to} exp(E{sub a}/kT), with an activation energy of {approximately} 0.8 eV. The steady-state leakage current in these samples appears to be bulk controlled. The voltage, temperature, and polarity dependence of the leakage current collectively suggest a ... continued below

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6 p.

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Al-Shareef, H. & Dimos, D. September 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Resistance degradation in PZT thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. It is found that the mean-time-to-failure (life-time or t{sub f}) of the capacitors shows a power law dependence on applied voltage of he form t{sub f} {proportional_to} V{sup {minus}n} (n {approximately} 4--5). The capacitor life-time also exhibits a temperature dependence of the form t{sub f} {proportional_to} exp(E{sub a}/kT), with an activation energy of {approximately} 0.8 eV. The steady-state leakage current in these samples appears to be bulk controlled. The voltage, temperature, and polarity dependence of the leakage current collectively suggest a leakage current mechanism most similar to a Frenkel-Poole process. The life-time and leakage current of the Nb-doped PZT films are superior to the undoped PZT films. This result can be explained based on the point-defect chemistry of the PZT system. Finally, the results indicate that the Nb-doped PZT films meet the essential requirements for decoupling capacitor applications.

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6 p.

Notes

OSTI as DE96014072

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  • International IEEE symposium on applications of ferroelectrics, East Brunswick, NJ (United States), 18-21 Aug 1996

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  • Other: DE96014072
  • Report No.: SAND--96-2055C
  • Report No.: CONF-960894--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 286280
  • Archival Resource Key: ark:/67531/metadc668659

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  • September 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 12, 2016, 9:33 p.m.

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Al-Shareef, H. & Dimos, D. Accelerated life-time testing and resistance degradation of thin-film decoupling capacitors, article, September 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc668659/: accessed July 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.