Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium

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Description

Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.

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9 p.

Creation Information

Myers, S.M. & Wampler, W.R. December 23, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 31 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.

Physical Description

9 p.

Notes

INIS; OSTI as DE00002812

Medium: P; Size: 9 pages

Source

  • Materials Research Society Conference, Boston, MA (US), 11/30/1998--12/05/1998

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  • Report No.: SAND98-1518C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 2812
  • Archival Resource Key: ark:/67531/metadc668571

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • December 23, 1998

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 11, 2017, 7:37 p.m.

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Myers, S.M. & Wampler, W.R. Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium, article, December 23, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc668571/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.