P- and N-type implantation doping of GaN with Ca and O

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Description

III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN ({approximately} 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall ... continued below

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6 p.

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Zolper, J.C.; Wilson, R.G.; Pearton, S.J. & Stall, R.A. May 1, 1996.

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  • Zolper, J.C. Sandia National Labs., Albuquerque, NM (United States)
  • Wilson, R.G. Hughes Research Lab., Malibu, CA (United States)
  • Pearton, S.J. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
  • Stall, R.A. Emcore Corp., Somerset, NJ (United States)

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN ({approximately} 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 {micro}m JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f{sub t} of 2.7 GHz, and a f{sub max} of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level ({approximately} 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C.

Physical Description

6 p.

Notes

INIS; OSTI as DE96010745

Source

  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96010745
  • Report No.: SAND--96-1053C
  • Report No.: CONF-960401--25
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/238549 | External Link
  • Office of Scientific & Technical Information Report Number: 238549
  • Archival Resource Key: ark:/67531/metadc668224

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • May 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Aug. 23, 2016, 3:13 p.m.

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Zolper, J.C.; Wilson, R.G.; Pearton, S.J. & Stall, R.A. P- and N-type implantation doping of GaN with Ca and O, report, May 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc668224/: accessed January 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.