In situ observation of defect growth beyond the irradiated region in yttria-stabilized zirconia induced by 400 keV xenon ion-beam at -90 and 30{degrees}C

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Description

Single crystals of yttria-stabilized zirconia were irradiated with 400 keV Xe ion-beam at room temperature and minus 90 degrees centigrade. Defect growth was monitored in situ with Rutherford Backscattering and ion channeling techniques using a 2 MeV He ion beam.

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20 p.

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Yu, N.; Sickafus, K. E.; Kodali, P. & Nastasi, M. April 1996.

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Description

Single crystals of yttria-stabilized zirconia were irradiated with 400 keV Xe ion-beam at room temperature and minus 90 degrees centigrade. Defect growth was monitored in situ with Rutherford Backscattering and ion channeling techniques using a 2 MeV He ion beam.

Physical Description

20 p.

Notes

INIS; OSTI as DE96008501

Source

  • Annual meeting and exhibition of the Minerals, Metals and Materials Society (TMS), Anaheim, CA (United States), 4-8 Feb 1996

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  • Other: DE96008501
  • Report No.: LA-UR--96-668
  • Report No.: CONF-960202--17
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 216288
  • Archival Resource Key: ark:/67531/metadc668155

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  • April 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Feb. 25, 2016, 7:43 p.m.

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Yu, N.; Sickafus, K. E.; Kodali, P. & Nastasi, M. In situ observation of defect growth beyond the irradiated region in yttria-stabilized zirconia induced by 400 keV xenon ion-beam at -90 and 30{degrees}C, article, April 1996; New Mexico. (digital.library.unt.edu/ark:/67531/metadc668155/: accessed November 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.