New developments in photoconductive detectors

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Nearly ideal for detecting ionizing radiation, wide bandgap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide bandgap semiconductors have progressed enormously. One particular wide bandgap semiconductor, diamond, has properties which may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films have become a reality. Over the past few ... continued below

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27 p.

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Han, S. July 1, 1996.

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Description

Nearly ideal for detecting ionizing radiation, wide bandgap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide bandgap semiconductors have progressed enormously. One particular wide bandgap semiconductor, diamond, has properties which may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films have become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diameter is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond`s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide bandgap semiconductors for ICF diagnostics will be presented.

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27 p.

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OSTI as DE96012657

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  • 11. annual high-temperature plasma diagnostics conference, Monterey, CA (United States), 12-16 May 1996

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  • Other: DE96012657
  • Report No.: LA-UR--96-2174
  • Report No.: CONF-960543--24
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 273745
  • Archival Resource Key: ark:/67531/metadc668142

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • July 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • Feb. 25, 2016, 9:53 p.m.

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Han, S. New developments in photoconductive detectors, article, July 1, 1996; New Mexico. (digital.library.unt.edu/ark:/67531/metadc668142/: accessed July 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.