Absolute Intensities of the Vacuum Ultraviolet Spectra in a Metal-Etch Plasma Processing Discharge

PDF Version Also Available for Download.

Description

In this paper we report absolute intensities of vacuum ultraviolet and near ultraviolet emission lines (4.8 eV to 18 eV ) for aluminum etching discharges in an inductively coupled plasma reactor. We report line intensities as a function of wafer type, pressure, gas mixture and rf excitation level. IrI a standard aluminum etching mixture containing C12 and BC13 almost all the light emitted at energies exceeding 8.8 eV was due to neutral atomic chlorine. Optical trapping of the WV radiation in the discharge complicates calculations of VUV fluxes to the wafer. However, we see total photon fluxes to the wailer ... continued below

Creation Information

Aragon, B.P.; Blain, M.G.; Hamilton, T.W.; Jarecki, R.L. & Woodworth, J.R. December 9, 1998.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 11 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

In this paper we report absolute intensities of vacuum ultraviolet and near ultraviolet emission lines (4.8 eV to 18 eV ) for aluminum etching discharges in an inductively coupled plasma reactor. We report line intensities as a function of wafer type, pressure, gas mixture and rf excitation level. IrI a standard aluminum etching mixture containing C12 and BC13 almost all the light emitted at energies exceeding 8.8 eV was due to neutral atomic chlorine. Optical trapping of the WV radiation in the discharge complicates calculations of VUV fluxes to the wafer. However, we see total photon fluxes to the wailer at energies above 8.8 eV on the order of 4 x 1014 photons/cm2sec with anon- reactive wafer and 0.7 x 10 `4 photons/cm2sec with a reactive wtier. The maj ority of the radiation observed was between 8.9 and 9.3 eV. At these energies, the photons have enough energy to create electron-hole pairs in Si02, but may penetrate up to a micron into the Si02 before being absorbed. Relevance of these measurements to vacuum-W photon-induced darnage of Si02 during etching is discussed.

Subjects

Keywords

STI Subject Categories

Source

  • Journal Name: Journal of Vacuum Science and Technology

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE00002246
  • Report No.: SAND98-2754J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 2246
  • Archival Resource Key: ark:/67531/metadc667921

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 9, 1998

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

Description Last Updated

  • Nov. 22, 2016, 2:22 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 11

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Aragon, B.P.; Blain, M.G.; Hamilton, T.W.; Jarecki, R.L. & Woodworth, J.R. Absolute Intensities of the Vacuum Ultraviolet Spectra in a Metal-Etch Plasma Processing Discharge, article, December 9, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc667921/: accessed September 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.