Laser encapsulation of metallic films in SiO{sub 2}

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Thin films of gold, copper and iron deposited on silica were driven into the substrate by a laser pulse. This transport takes place only when the irradiation is performed at a laser energy density of 0.7 J/cm{sup 2} or lower. Cross sectional transmission electron microscopy (TEM) of the irradiated specimens reveals two distinctive stages in the encapsulation process. In the first, the film melts and clusters into small particles and in the second one the particles are driven into the substrate by the laser pulse. The particle size of encapsulated metal varies from 5 to 50 nm. Selected area diffraction ... continued below

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7 p.

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Pedraza, A.J.; Cao, S.; Lowndes, D.H. & Allard, L.F. December 31, 1995.

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Description

Thin films of gold, copper and iron deposited on silica were driven into the substrate by a laser pulse. This transport takes place only when the irradiation is performed at a laser energy density of 0.7 J/cm{sup 2} or lower. Cross sectional transmission electron microscopy (TEM) of the irradiated specimens reveals two distinctive stages in the encapsulation process. In the first, the film melts and clusters into small particles and in the second one the particles are driven into the substrate by the laser pulse. The particle size of encapsulated metal varies from 5 to 50 nm. Selected area diffraction of the large particles and lattice fringe images of the smaller particles reveal pure metals, e.g., gold, copper or iron. Titanium films laser irradiated are not encapsulated in silica; instead, these films react with silica forming an amorphous compound. Apparently, one of the conditions required for encapsulation is that the metal should not react with the substrate material. On subsequent irradiation at a laser energy density of 1.5 J/cm{sup 2}, ablation of silica partially exposes the metallic particles. Strong bonding between a new film deposited after irradiation and the substrate is obtained because these particles anchor the freshly deposited film. Anchoring is clearly revealed by cross sectional TEM. The mechanisms of encapsulation are discussed using results from TEM and adhesion testing.

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7 p.

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OSTI as DE96006726

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96006726
  • Report No.: CONF-951155--64
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 205117
  • Archival Resource Key: ark:/67531/metadc667707

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  • December 31, 1995

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • June 24, 2016, 12:57 p.m.

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Pedraza, A.J.; Cao, S.; Lowndes, D.H. & Allard, L.F. Laser encapsulation of metallic films in SiO{sub 2}, article, December 31, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc667707/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.