In situ growth rate measurements by normal-incidence reflectance during MOVPE growth

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Description

We present an in situ technique for monitoring metal-organic vapor phase epitaxy growth by normal-incidence reflectance. This technique is used to calibrate the growth rate periodically and to monitor the growth process routinely. It is not only a precise tool to measure the growth rate, but also very useful in identifying unusal problems during a growth run, such as depletion of source material, deterioration of surface morphology, and problems associated with an improper growht procedure. We will also present an excellent reproducibility ({+-}0.3% over a course of more than 100 runs) of the cavity wavelength of vertical-cavity surface emitting laser ... continued below

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9 p.

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Hou, H.Q.; Breiland, W.G.; Hammons, B.E. & Chui, H.C. May 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We present an in situ technique for monitoring metal-organic vapor phase epitaxy growth by normal-incidence reflectance. This technique is used to calibrate the growth rate periodically and to monitor the growth process routinely. It is not only a precise tool to measure the growth rate, but also very useful in identifying unusal problems during a growth run, such as depletion of source material, deterioration of surface morphology, and problems associated with an improper growht procedure. We will also present an excellent reproducibility ({+-}0.3% over a course of more than 100 runs) of the cavity wavelength of vertical-cavity surface emitting laser structures with periodic calibration by this in situ technique.

Physical Description

9 p.

Notes

OSTI as DE96008900

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  • 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996

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  • Other: DE96008900
  • Report No.: SAND--96-0874C
  • Report No.: CONF-960502--10
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 228515
  • Archival Resource Key: ark:/67531/metadc667332

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 4:07 p.m.

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Hou, H.Q.; Breiland, W.G.; Hammons, B.E. & Chui, H.C. In situ growth rate measurements by normal-incidence reflectance during MOVPE growth, article, May 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc667332/: accessed November 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.