Ground penetrating radar enabled by high gain GaAs photoconductive semiconductor switches

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The ability of high gain GaAs Photoconductive Semiconductor switches (PCSS) to deliver fast risetime, low jitter pulses when triggered with small laser diode arrays makes them suitable for their use in ultrawide bandwidth (UWB), impulse transmitters. This paper will summarize the state-of-the-art in high gain GaAs switches and discuss how GaAs switches are being implemented in a transmitter for detection of underground structures. The advantage of this type of semiconductor switch is demonstrated operation at high voltages (100 kV) and repetition rates (1 kHz) with the potential for much higher repetition rates. The latter would increase the demonstrated average powers ... continued below

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8 p.

Creation Information

Loubriel, G.M.; Buttram, M.T.; Aurand, J.F. & Zutavern, F.J. June 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The ability of high gain GaAs Photoconductive Semiconductor switches (PCSS) to deliver fast risetime, low jitter pulses when triggered with small laser diode arrays makes them suitable for their use in ultrawide bandwidth (UWB), impulse transmitters. This paper will summarize the state-of-the-art in high gain GaAs switches and discuss how GaAs switches are being implemented in a transmitter for detection of underground structures. The advantage of this type of semiconductor switch is demonstrated operation at high voltages (100 kV) and repetition rates (1 kHz) with the potential for much higher repetition rates. The latter would increase the demonstrated average powers of 100 W to 1 kW and higher. We will also present an analysis of the effectiveness of different pulser geometries that result in transmitted pulses with varying frequency content. To this end, we have developed a simple model that includes transmit and receive antenna response, attenuation and dispersion of the electromagnetic impulses by the soil, and target cross sections.

Physical Description

8 p.

Notes

OSTI as DE96011855

Source

  • 3. international conference on ultra-wideband, short-pulse electromagnetics, Albuquerque, NM (United States), 27-31 May 1996

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  • Other: DE96011855
  • Report No.: SAND--96-0393C
  • Report No.: CONF-9605185--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 263936
  • Archival Resource Key: ark:/67531/metadc666927

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  • June 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 13, 2016, 2:01 p.m.

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Loubriel, G.M.; Buttram, M.T.; Aurand, J.F. & Zutavern, F.J. Ground penetrating radar enabled by high gain GaAs photoconductive semiconductor switches, article, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc666927/: accessed April 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.