Chemical Kinetics for Modeling Silicon Epitaxy from Chlorosilanes

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Description

A reaction mechanism has been developed that describes the gas-phas 0971 and surface reactions involved in the chemical vapor deposition of Si from chlorosilanes. Good agreement with deposition rate data from a single wafer reactor with no wafer rotation has been attained over a range of gas mixtures, total flow rates, and reactor temperatures.

Creation Information

Balakrishna, A.; Chacin, J.M.; Comita, P.B.; Haas, B.; Ho, P. & Thilderkvist, A. November 24, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 262 times , with 6 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

A reaction mechanism has been developed that describes the gas-phas 0971 and surface reactions involved in the chemical vapor deposition of Si from chlorosilanes. Good agreement with deposition rate data from a single wafer reactor with no wafer rotation has been attained over a range of gas mixtures, total flow rates, and reactor temperatures.

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  • 194th Meeting of the Electrochemical Society; Boston, MA; 06/01/1998

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  • Other: DE00002056
  • Report No.: SAND98-1874C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 2056
  • Archival Resource Key: ark:/67531/metadc666909

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • November 24, 1998

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Nov. 22, 2016, 10:26 p.m.

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Balakrishna, A.; Chacin, J.M.; Comita, P.B.; Haas, B.; Ho, P. & Thilderkvist, A. Chemical Kinetics for Modeling Silicon Epitaxy from Chlorosilanes, article, November 24, 1998; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc666909/: accessed May 21, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.