Adhesion studies of GaAs-based ohmic contact and bond pad metallization

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Adhesion strength and surface morphology of commonly used n- and p-type ohmic contacts and pad metallization schemes for GaAs were investigated. GeNiAu, GePdAu, BeAu, and TiPtAu (being studied as potential ohmic contacts for internal optoelectronic devices) had quantitiative measurements made using wire bond pull testing to determine adhesion. Bond pad metals deposited as evaporated TiAu, TiPtAu, and 2-5 micron thick electroplated Au deposited on both semi-insulating GaAs and on Si{sub 3}N{sub 4}/GaAs were evaluated independently from the ohmic contact metals. In all samples was observed a strong correlation between surface treatment, surface morphology, wire bondability, and bond strength. Very high ... continued below

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11 p.

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Seigal, P.K.; Briggs, R.D.; Rieger, D.J.; Baca, A.G. & Howard, A.J. March 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Adhesion strength and surface morphology of commonly used n- and p-type ohmic contacts and pad metallization schemes for GaAs were investigated. GeNiAu, GePdAu, BeAu, and TiPtAu (being studied as potential ohmic contacts for internal optoelectronic devices) had quantitiative measurements made using wire bond pull testing to determine adhesion. Bond pad metals deposited as evaporated TiAu, TiPtAu, and 2-5 micron thick electroplated Au deposited on both semi-insulating GaAs and on Si{sub 3}N{sub 4}/GaAs were evaluated independently from the ohmic contact metals. In all samples was observed a strong correlation between surface treatment, surface morphology, wire bondability, and bond strength. Very high bond strengths (pull test average values above 6.5 grams force with 25 micron dia Au wire) wereobtained for n-type, p-type, and bond pad metals. Average values of 8.0 gram force were achieved with two-step GeAu/NiAu/TiPtAu metallization, while one-step deposition yielded poorer values. Adhesion was also monitored after aging at 250 C in air for four different times up to 60 hr by wire bond pull testing, with little degradation occurring.

Physical Description

11 p.

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OSTI as DE96008229

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  • ICMCTF `96: international conference on metallurgical coatings and thin films, San Diego, CA (United States), 22-26 Apr 1996

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  • Other: DE96008229
  • Report No.: SAND--95-2117C
  • Report No.: CONF-960457--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 210932
  • Archival Resource Key: ark:/67531/metadc666849

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  • March 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 12, 2016, 9:35 p.m.

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Seigal, P.K.; Briggs, R.D.; Rieger, D.J.; Baca, A.G. & Howard, A.J. Adhesion studies of GaAs-based ohmic contact and bond pad metallization, article, March 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc666849/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.