Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon

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Description

We have mechanistically and quantitatively characterized the binding of transition-metal impurities in Si to cavities formed by He implantation and to B-Si precipitates resulting from B implantation. Both sinks are inferred to act by the segregation of metal atoms to pre-existing low-energy sites, namely surface chemisorption sites in the case of cavities and bulk solution sites in the case of the B-Si phase. These gettering processes exhibit large binding energies, and they are predicted to remain active for arbitrarily small initial impurity concentrations as a result of the segregation mechanisms. Both appear promising for gettering in Si devices.

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22 p.

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Myers, S.M.; Petersen, G.A.; Follstaedt, D.M. & Headley, T.J. June 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We have mechanistically and quantitatively characterized the binding of transition-metal impurities in Si to cavities formed by He implantation and to B-Si precipitates resulting from B implantation. Both sinks are inferred to act by the segregation of metal atoms to pre-existing low-energy sites, namely surface chemisorption sites in the case of cavities and bulk solution sites in the case of the B-Si phase. These gettering processes exhibit large binding energies, and they are predicted to remain active for arbitrarily small initial impurity concentrations as a result of the segregation mechanisms. Both appear promising for gettering in Si devices.

Physical Description

22 p.

Notes

OSTI as DE96011837

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  • Spring meeting of the European Materials Research Society, Strasbourg (France), 4-7 Jun 1996

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  • Other: DE96011837
  • Report No.: SAND--96-0612C
  • Report No.: CONF-9606136--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 243504
  • Archival Resource Key: ark:/67531/metadc666826

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Office of Scientific & Technical Information Technical Reports

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  • June 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 12:55 p.m.

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Myers, S.M.; Petersen, G.A.; Follstaedt, D.M. & Headley, T.J. Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon, article, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc666826/: accessed September 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.