Integrated decoupling capacitors using Pb(Zr,Ti)O{sub 3} thin films

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Description

Thin-film decoupling capacitors based on ferroelectric PLZT (PbLaZrTiO{sub 3}) films are being developed for advanced packaging. The increased integration that can be achieved by replacing surface- mount capacitors should lead to decreased package volume and improved high-speed performance. For this application, chemical solution deposition is an appropriate fabrication technique since it is a low- cost, high-throughput process. Relatively thick Pt electrodes (1{mu}m) are used to minimize series resistance and inductance in fabricating these devices. Also, important electrical properties are discussed, with emphasis on lifetime measurements, which suggest that resistance degradation will not be a severe limitation on device performance. Finally, ... continued below

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12 p.

Creation Information

Dimos, D.; Lockwood, S.J.; Garino, T.J.; Al-Shareef, H.N. & Schwartz, R.W. July 1, 1996.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 13 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Thin-film decoupling capacitors based on ferroelectric PLZT (PbLaZrTiO{sub 3}) films are being developed for advanced packaging. The increased integration that can be achieved by replacing surface- mount capacitors should lead to decreased package volume and improved high-speed performance. For this application, chemical solution deposition is an appropriate fabrication technique since it is a low- cost, high-throughput process. Relatively thick Pt electrodes (1{mu}m) are used to minimize series resistance and inductance in fabricating these devices. Also, important electrical properties are discussed, with emphasis on lifetime measurements, which suggest that resistance degradation will not be a severe limitation on device performance. Finally, some of the work being done to develop methods of integrating these thin-film capacitors with integrated circuits and multichip modules is presented.

Physical Description

12 p.

Notes

OSTI as DE96011700

Source

  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96011700
  • Report No.: SAND--96-1475C
  • Report No.: CONF-960401--57
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 253365
  • Archival Resource Key: ark:/67531/metadc666539

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • July 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 13, 2016, 2:37 p.m.

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Dimos, D.; Lockwood, S.J.; Garino, T.J.; Al-Shareef, H.N. & Schwartz, R.W. Integrated decoupling capacitors using Pb(Zr,Ti)O{sub 3} thin films, article, July 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc666539/: accessed April 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.