Direct Observations of Defect Structures in Optoelectronic Materials by Z-Contrast STEM

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Optoelectronic semiconductor materials have wide and important technological applications. For example, wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers, while HgCdTe II-VI semiconductors are the most promising candidates for applications as infrared detectors, or large array x-ray or r-ray detectors. In this paper, two examples are given to show that high-resolution Z-contrast imaging is an effective technique to determine the atomic structures of defects in these complex semiconductor materials.

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2 Pages

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Beaumont, B.; Browning, N.D.; Chen, Y.P.; Faurie, J.-P.; Gibart, P.; Nellist, P.D. et al. August 31, 1998.

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Optoelectronic semiconductor materials have wide and important technological applications. For example, wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers, while HgCdTe II-VI semiconductors are the most promising candidates for applications as infrared detectors, or large array x-ray or r-ray detectors. In this paper, two examples are given to show that high-resolution Z-contrast imaging is an effective technique to determine the atomic structures of defects in these complex semiconductor materials.

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2 Pages

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  • 14th International Conference on Electron Microscopy, Cancun, Mexico, August 31-September 4, 1998

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  • Other: DE00001740
  • Report No.: ORNL/CP-100161
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 1740
  • Archival Resource Key: ark:/67531/metadc666490

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Office of Scientific & Technical Information Technical Reports

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  • August 31, 1998

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  • June 29, 2015, 9:42 p.m.

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  • Nov. 4, 2015, 2:03 p.m.

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Beaumont, B.; Browning, N.D.; Chen, Y.P.; Faurie, J.-P.; Gibart, P.; Nellist, P.D. et al. Direct Observations of Defect Structures in Optoelectronic Materials by Z-Contrast STEM, article, August 31, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc666490/: accessed October 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.