Ultra High Temperature Rapid Thermal Annealing of GaN

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Description

All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on A1203 substrates. Annealing was performed at 1100- 1500 C, using AIN encapsulation. Activation percentages of >90Y0 were obtained for Si+ implantation annealed at 1400 C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450 C.

Creation Information

Cao, X.A.; Fu, M.; Han, J.; Pearton, S.J.; Rieger, D.J.; Sekhar, J.A. et al. November 20, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on A1203 substrates. Annealing was performed at 1100- 1500 C, using AIN encapsulation. Activation percentages of >90Y0 were obtained for Si+ implantation annealed at 1400 C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450 C.

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  • Journal Name: Materials Issues in Semiconductor Process

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  • Other: DE00001958
  • Report No.: SAND98-2592J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1016/S1369-8001(98)00037-7 | External Link
  • Office of Scientific & Technical Information Report Number: 1958
  • Archival Resource Key: ark:/67531/metadc666455

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Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • November 20, 1998

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Dec. 8, 2016, 1:10 p.m.

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Cao, X.A.; Fu, M.; Han, J.; Pearton, S.J.; Rieger, D.J.; Sekhar, J.A. et al. Ultra High Temperature Rapid Thermal Annealing of GaN, article, November 20, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc666455/: accessed April 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.