Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture Page: 2 of 26
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In the fabrication of high frequency electronic devices as well as optoelectronic
devices, it is critical to accurately control the pattern size, while minimizing damage
created during the patterning process. As in Si-based semiconductor technology, the trend
toward decreasing feature size has become an important issue and to this end various
types of dry etching techniques have been under development.1-13 One of the most
flexible etching methods for GaAs and related compounds is reactive ion beam etching
(RIBE).14-16 In contrast to conventional reactive ion etching (RIE), the ion energy and
flux can be controlled independently in the RIBE system. In order to optimize etch rate
and smooth etch morphology in the RIBE process, it is important to elucidate the effects
of process variables such as beam voltage and current, etch gas concentration and
substrate temperature, and to understand their relationship.
Most of recent works on the etching of III-V compounds have focused on
understanding the dry etching process in terms of etch rate and surface morphology or
etch profiles. Variations of ion energy and substrate temperature have been used mainly
to control the etch characteristics. Little work has been reported to elucidate the RIBE
process of III-V compounds by combining the effects of main variables such as beam
voltage and current, substrate temperature and C12 concentration, and by explaining the
results in terms of etch yield together with etch rate, surface chemistry and etch products,
especially for high density plasma sources.
Comparatively little is known about the etch products for III-V semiconductors in
high density plasmas. The prototypical system is C12/GaAs, where extensive work on
high vacuum (10-6 - 10~7 Torr) molecular beam experiments has identified the dominant
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Abernathy, C.R.; Hahn, Y.B.; Hays, D.; Lambers, E.S.; Lee, J.W.; Pearton, S.J. et al. Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture, article, November 23, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc666105/m1/2/: accessed February 16, 2019), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.