Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture

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Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture using an Inductively Coupled Plasma (ICP) source. `The etch rates and yields were strongly affected by ion energy and substrate temperature. The RJBE was dominated by ion-assisted etching at <600 eV and by physical sputtering beyond 600 eV. The temperature dependence of the etch rates revealed three different regimes, depending on the substrate temperature: 1) sputtering-etch limited, 2) products-resorption limited, and 3) mass-transfer limited regions. GaSb showed the overall highest etch rates, while GaAs and AIGaAs were etched at the same rates. The ... continued below

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Abernathy, C.R.; Hahn, Y.B.; Hays, D.; Lambers, E.S.; Lee, J.W.; Pearton, S.J. et al. November 23, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture using an Inductively Coupled Plasma (ICP) source. `The etch rates and yields were strongly affected by ion energy and substrate temperature. The RJBE was dominated by ion-assisted etching at <600 eV and by physical sputtering beyond 600 eV. The temperature dependence of the etch rates revealed three different regimes, depending on the substrate temperature: 1) sputtering-etch limited, 2) products-resorption limited, and 3) mass-transfer limited regions. GaSb showed the overall highest etch rates, while GaAs and AIGaAs were etched at the same rates. The etched features showed extremely smooth morphologies with anisotropic sidewalls.

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  • Journal Name: Journal of Vacuum Science and Technology B

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  • Other: DE00001999
  • Report No.: SAND98-2616J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1999
  • Archival Resource Key: ark:/67531/metadc666105

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  • November 23, 1998

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  • June 29, 2015, 9:42 p.m.

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  • Dec. 1, 2016, 1:24 p.m.

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Abernathy, C.R.; Hahn, Y.B.; Hays, D.; Lambers, E.S.; Lee, J.W.; Pearton, S.J. et al. Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture, article, November 23, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc666105/: accessed November 14, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.