Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe and ZnO buffer layers. Final report, February 16, 1992--November 15, 1995

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The major objective of this program was to determine the potential of ZnSe and ZnO buffer layers in solar cells based on CuInSe{sub 2} and related alloys. Experimental studies were carried out with CIS and CIGSS substrates. ZnSe films were deposited by a CVD process which involved the reaction of a zinc adduct and H{sub 2}Se. Al/ZnSe/CIS test cells were used for process development. Test cell performance aided in determining the optimum thickness for ZnSe buffer layers to be in the range of 150 {angstrom} to 200 {angstrom} for Siemens CIS material, and between 80 {angstrom} and 120 {angstrom} for ... continued below

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49 p.

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Olsen, L.C. June 1, 1996.

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  • Olsen, L.C. Washington State Univ., Richland, WA (United States)

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The major objective of this program was to determine the potential of ZnSe and ZnO buffer layers in solar cells based on CuInSe{sub 2} and related alloys. Experimental studies were carried out with CIS and CIGSS substrates. ZnSe films were deposited by a CVD process which involved the reaction of a zinc adduct and H{sub 2}Se. Al/ZnSe/CIS test cells were used for process development. Test cell performance aided in determining the optimum thickness for ZnSe buffer layers to be in the range of 150 {angstrom} to 200 {angstrom} for Siemens CIS material, and between 80 {angstrom} and 120 {angstrom} for the graded absorber material. If the buffer layers exceeded these values significantly, the short-circuit current would be reduced to zero. The best efficiency achieved for a ZnSe/CIS cell was an active area value of 9.2%. In general, deposition of a conductive ZnO film on top of a ZnSe/CIS structure resulted in either shunted or inflected I-V characteristics. Two approaches were investigated for depositing ZnO buffer layers, namely, chemical bath deposition and CVD. CVD ZnO buffer layers are grown by reacting a zinc adduct with tetrahydrofuran. Best results were obtained for ZnO buffer layers grown with a substrate temperature ca. 225--250 C. These studies concentrated on Siemens graded absorber material (CIGSS). ZnO/CIS solar cells have been fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and an Al/Ag collector grid. Several cells were fabricated with an area of 0.44 cm{sup 2} that have total area efficiencies greater than 11%. To date, the best performing ZnO/CIS cell had a total area efficiency of 11.3%. In general, the authors find that ZnO buffer layers should have a resistivity > 1,000 ohm-cm and have a thickness from 200 {angstrom} to 600 {angstrom}. CIS cells studies with ZnO buffer layers grown by CBD also show promise. Finally, simulation studies were carried out using the 1-D code, PC-1D.

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49 p.

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OSTI as DE96007923

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  • Other Information: PBD: Jun 1996

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  • Other: DE96007923
  • Report No.: NREL/TP--451-21406
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/266650 | External Link
  • Office of Scientific & Technical Information Report Number: 266650
  • Archival Resource Key: ark:/67531/metadc666011

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  • June 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • March 31, 2016, 8:49 p.m.

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Olsen, L.C. Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe and ZnO buffer layers. Final report, February 16, 1992--November 15, 1995, report, June 1, 1996; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc666011/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.