Diamond switches for high temperature electronics

PDF Version Also Available for Download.

Description

Diamond switches are well suited for use in high temperature electronics. Laboratory feasibility of diamond switching at 1 kV and 18 A was demonstrated. DC blocking voltages up to 1 kV were demonstrated. A 50 {Omega} load line was switched using a diamond switch, with switch on-state resistivity {approx}7 {Omega}-cm. An electron beam, {approx}150 keV energy, {approx}2 {mu}s full width at half maximum was used to control the 5 mm x 5 mm x 100 {mu}m thick diamond switch. The conduction current temporal history mimics that of the electron beam. These data were taken at room temperature.

Physical Description

8 p.

Creation Information

Prasad, R.R.; Rondeau, G. & Qi, Niansheng April 25, 1996.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Diamond switches are well suited for use in high temperature electronics. Laboratory feasibility of diamond switching at 1 kV and 18 A was demonstrated. DC blocking voltages up to 1 kV were demonstrated. A 50 {Omega} load line was switched using a diamond switch, with switch on-state resistivity {approx}7 {Omega}-cm. An electron beam, {approx}150 keV energy, {approx}2 {mu}s full width at half maximum was used to control the 5 mm x 5 mm x 100 {mu}m thick diamond switch. The conduction current temporal history mimics that of the electron beam. These data were taken at room temperature.

Physical Description

8 p.

Notes

OSTI as DE96010741

Source

  • 3. international high temperature electronics conference, Albuquerque, NM (United States), 9-14 Jun 1996

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE96010741
  • Report No.: SAND--96-1067C
  • Report No.: CONF-9606159--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 233381
  • Archival Resource Key: ark:/67531/metadc665886

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • April 25, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

Description Last Updated

  • April 14, 2016, 8:24 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 8

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Prasad, R.R.; Rondeau, G. & Qi, Niansheng. Diamond switches for high temperature electronics, article, April 25, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc665886/: accessed October 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.