Thermal metalorganic chemical vapor deposition of Ti-Si-N films for diffusion barrier applications

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Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here the authors present results on purely thermal metalorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450 C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0--20 at.%. Typical impurity contents are 5--10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1,000 {micro}{Omega}-cm for ... continued below

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6 p.

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Custer, J. S.; Smith, P. M.; Jones, R. V.; Maverick, A. W.; Roberts, D. A.; Norman, J. A. T. et al. April 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here the authors present results on purely thermal metalorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450 C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0--20 at.%. Typical impurity contents are 5--10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1,000 {micro}{Omega}-cm for films with less than 5 at.% Si. These films are promising candidates for advanced diffusion barriers.

Physical Description

6 p.

Notes

OSTI as DE96009176

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96009176
  • Report No.: SAND--96-0919C
  • Report No.: CONF-960401--4
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/219352 | External Link
  • Office of Scientific & Technical Information Report Number: 219352
  • Archival Resource Key: ark:/67531/metadc665516

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  • April 1996

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  • June 29, 2015, 9:42 p.m.

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  • Nov. 25, 2015, 5:36 p.m.

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Custer, J. S.; Smith, P. M.; Jones, R. V.; Maverick, A. W.; Roberts, D. A.; Norman, J. A. T. et al. Thermal metalorganic chemical vapor deposition of Ti-Si-N films for diffusion barrier applications, report, April 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc665516/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.