W, WSi{sub x} and Ti/Al low resistance OHMIC contacts to InGaN, InN and InAlN

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W, WSi{sub 0.44} and Ti/Al contacts were examined on n{sup +} In{sub 0.65}Ga{sub 0.35}N, InN and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance ({rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 {degrees}C mainly due to out diffusion of In and N. WSi{sub x} showed an as-deposited {rho}{sub c} of 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to {approximately} 600 {degrees}C ({rho}{sub c} {approximately} 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} at {le}600 {degrees}C). The surfaces ... continued below

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9 p.

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Vartuli, C. B.; Pearton, S. J.; Abernathy, C. R.; MacKenzie, J. D.; Shul, R. J.; Zolper, J. C. et al. June 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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W, WSi{sub 0.44} and Ti/Al contacts were examined on n{sup +} In{sub 0.65}Ga{sub 0.35}N, InN and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance ({rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 {degrees}C mainly due to out diffusion of In and N. WSi{sub x} showed an as-deposited {rho}{sub c} of 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to {approximately} 600 {degrees}C ({rho}{sub c} {approximately} 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} at {le}600 {degrees}C). The surfaces of these contacts remain smooth to 800 {degrees}C for W and WSi{sub x} and 650 {degrees}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with {rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2} and for WSi{sub x} {rho}{sub c} {approximately} 10{sup {minus}6} {Omega} {center_dot}cm{sup 2}. All remained smooth to {approximately} 600 {degrees}C, but exhibited significant interdiffusion of In, N, W and Ti respectively at higher temperatures. The contact resistances for all three metalization schemes were {ge} 10{sup {minus}4} {Omega} {center_dot}cm{sup 2} on InAlN, and degrades with subsequent annealing. The Ti/Al was found to react with the InAlN above 400 {degrees}C, causing the contact resistance to increase rapidly. W and WSi{sub x} proved to be more stable with {rho}{sub c} {approximately} 10{sup {minus}2} and 10{sup {minus}3} {Omega} {center_dot}cm{sup 2} up to 650 {degrees}C and 700 {degrees}C respectively.

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9 p.

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OSTI as DE96011851

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96011851
  • Report No.: SAND--96-1392C
  • Report No.: CONF-960401--49
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 248579
  • Archival Resource Key: ark:/67531/metadc665465

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  • June 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 2:18 p.m.

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Vartuli, C. B.; Pearton, S. J.; Abernathy, C. R.; MacKenzie, J. D.; Shul, R. J.; Zolper, J. C. et al. W, WSi{sub x} and Ti/Al low resistance OHMIC contacts to InGaN, InN and InAlN, article, June 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc665465/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.