Electronic processes in uniaxially stressed p-type germanium

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Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed ... continued below

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127 p.

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Dubon, O.D. Jr. February 1, 1996.

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Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

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127 p.

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OSTI as DE96008466

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  • Other Information: TH: Thesis (Ph.D.)

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  • Other: DE96008466
  • Report No.: LBL--38287
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 212680
  • Archival Resource Key: ark:/67531/metadc665188

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Office of Scientific & Technical Information Technical Reports

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  • February 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 4, 2016, 9:19 p.m.

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Dubon, O.D. Jr. Electronic processes in uniaxially stressed p-type germanium, thesis or dissertation, February 1, 1996; California. (digital.library.unt.edu/ark:/67531/metadc665188/: accessed November 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.