Comparison of GaAs JFETs to MESFETs for high-temperature operation

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GaAs-based Metal Semiconductor Field Effect transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) have been the focus of research for high-temperature operation due to the 1.42 eV band gap of GaAs that reduces thermal carrier generation as compared to 1.1 eV silicon-based electronics. Although schemes have been proposed to minimize substrate currents at elevated temperatures, high-temperature operation of these devices is ultimately limited by the gate leakage current of the Schottky gate contact. Since a Junction Field Effect Transistor (JFET) has a higher gate barrier to current flow than a Schottky barrier MESFET as a result of the p/n junction ... continued below

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6 p.

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Zolper, J.C.; Hietala, V.M.; Housel, M.S.; Baca, A.G. & Sherwin, M.E. June 1, 1996.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

GaAs-based Metal Semiconductor Field Effect transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) have been the focus of research for high-temperature operation due to the 1.42 eV band gap of GaAs that reduces thermal carrier generation as compared to 1.1 eV silicon-based electronics. Although schemes have been proposed to minimize substrate currents at elevated temperatures, high-temperature operation of these devices is ultimately limited by the gate leakage current of the Schottky gate contact. Since a Junction Field Effect Transistor (JFET) has a higher gate barrier to current flow than a Schottky barrier MESFET as a result of the p/n junction gate, JFETs should have superior performance at elevated temperatures. This paper compares the high-temperature performance of a self-aligned GaAs MESFET and JFET. Both devices suffer from substrate leakage at high temperature; however, the JFET has superior gate characteristics and maintains a larger fraction of its room temperature transconductance at 300 C.

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6 p.

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OSTI as DE96011822

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  • 3. international high temperature electronics conference, Albuquerque, NM (United States), 9-14 Jun 1996

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  • Other: DE96011822
  • Report No.: SAND--96-1418C
  • Report No.: CONF-9606159--6
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 242664
  • Archival Resource Key: ark:/67531/metadc665052

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 3:24 p.m.

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Zolper, J.C.; Hietala, V.M.; Housel, M.S.; Baca, A.G. & Sherwin, M.E. Comparison of GaAs JFETs to MESFETs for high-temperature operation, article, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc665052/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.