In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures

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Description

In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial MOCVD reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of RHEED in MBE as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than one hour. Working VCSEL devices are obtained on the first try after calibration. ... continued below

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24 p.

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Breiland, W.G.; Hou, H.Q.; Chui, H.C. & Hammons, B.E. August 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial MOCVD reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of RHEED in MBE as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than one hour. Working VCSEL devices are obtained on the first try after calibration. Repeated runs have yielded {+-} 0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 runs.

Physical Description

24 p.

Notes

OSTI as DE96013244

Source

  • 10. American conference on crystal growth with the 9th international conference on vapor growth and epitaxy, Vail, CO (United States), 4-9 Aug 1996

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  • Other: DE96013244
  • Report No.: SAND--96-1684C
  • Report No.: CONF-960813--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 270794
  • Archival Resource Key: ark:/67531/metadc664921

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • August 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 8:33 p.m.

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Breiland, W.G.; Hou, H.Q.; Chui, H.C. & Hammons, B.E. In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures, article, August 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664921/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.