High temperature stable W and WSi{sub x} ohmic contacts on GaN and InGaN

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Conventional III-V metallizations chemes such as Au/Ge/Ni, Ti/Pt/Au, and Au/Be were found to display poor thermal stability on both GaN and InGaN, with extensive reaction and contact degradation at {le}500 C. By contrast, W was found to produce low contact resistance ({rho}{sub c}{similar_to}8x10{sup -5}{Omega}cm{sup 2}) to n-GaN. Ga outdiffusion to the surface of thin (500 A) W films was found after annealing at 1,100 C, but not at 1000 C. Interfacial abruptness increased by 300A after 1,100 C annealing. In the case of WSi{sub X} (X=0.45), Ga outdiffusion was absent even at 1,100 C, but again there was interfacial broadening ... continued below

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6 p.

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Pearton, S.J.; Abernathy, C.R. & Durbha, A. June 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Conventional III-V metallizations chemes such as Au/Ge/Ni, Ti/Pt/Au, and Au/Be were found to display poor thermal stability on both GaN and InGaN, with extensive reaction and contact degradation at {le}500 C. By contrast, W was found to produce low contact resistance ({rho}{sub c}{similar_to}8x10{sup -5}{Omega}cm{sup 2}) to n-GaN. Ga outdiffusion to the surface of thin (500 A) W films was found after annealing at 1,100 C, but not at 1000 C. Interfacial abruptness increased by 300A after 1,100 C annealing. In the case of WSi{sub X} (X=0.45), Ga outdiffusion was absent even at 1,100 C, but again there was interfacial broadening and some phase changes in the WSi{sub X}. On In{sub 0.5}Ga{sub 0.5}N, a minimum specific contact resistivity of 1.5 x10{sup -5}{Omega}cm{sup 2} was obtained for WSi{sub X} annealed at 700 C. These contacts retained a smooth morphology and abrupt interfaces to 800 C. Graded In{sub X}Ga{sub 1-X}N layers have been employed on GaAs/AlGaAs HBTs (heterojunction bipolar transistors), replacing conventional In{sub X}Ga{sub 1-X}As layers. R{sub C} values of 5x10{sup -7}{Omega}cm{sup 2} were obtained for nonalloyed Ti/Pt/Au on the InGaN, and the morphologies were superior to those of InGaAs contact layers. This proves to have significant advantages for fabrication of sub-micron HBTs. Devices with emitter dimensions of 2x5{mu}m{sup 2} displayed gains of 35 for a base doping level of 7x10{sup 19}cm{sup -3} and stable long-term behavior.

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6 p.

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OSTI as DE96011849

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  • 3. international high temperature electronics conference, Albuquerque, NM (United States), 9-14 Jun 1996

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  • Other: DE96011849
  • Report No.: SAND--96-1386C
  • Report No.: CONF-9606159--4
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 245536
  • Archival Resource Key: ark:/67531/metadc664838

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  • June 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • Aug. 23, 2016, 3:33 p.m.

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Pearton, S.J.; Abernathy, C.R. & Durbha, A. High temperature stable W and WSi{sub x} ohmic contacts on GaN and InGaN, article, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664838/: accessed November 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.