Role of C, O and H in III-V nitrides

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The light ion impurities C, 0 and H have been implanted or diffused into GaN and related compounds and their effect on the electrical properties of these materials measured by Hall, C-V and SIMS as a function of annealing temperatures from 300--11OO{degree}C. While C in as-grown GaN appears to create an acceptor under MOMBE conditions, implanted C shows no measurable activity. Similarly, implanted 0 does not show any shallow donor activity after annealing at {le}700{degree}C, but can create high resistivity regions (10{sup 6} {Omega}/{open_square}) in GaN, AlInN and InGaN for device isolation when annealed at 500--70O{degree}C. Finally, hydrogen is found ... continued below

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6 p.

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Abernathy, C.R.; Pearton, S.J.; MacKenzie, J.D.; Lee, J.W.; Vartuli, C.B.; Wilson, R.G. et al. December 1, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The light ion impurities C, 0 and H have been implanted or diffused into GaN and related compounds and their effect on the electrical properties of these materials measured by Hall, C-V and SIMS as a function of annealing temperatures from 300--11OO{degree}C. While C in as-grown GaN appears to create an acceptor under MOMBE conditions, implanted C shows no measurable activity. Similarly, implanted 0 does not show any shallow donor activity after annealing at {le}700{degree}C, but can create high resistivity regions (10{sup 6} {Omega}/{open_square}) in GaN, AlInN and InGaN for device isolation when annealed at 500--70O{degree}C. Finally, hydrogen is found to passivate shallow donor and acceptor states in GaN, InN. InAlN and InGaN, with dissociation of the neutral complexes at >450{degree}C. The liberated hydrogen does not leave the nitride films until much higher annealing temperatures (>800{degree}C). Typical reactivation energies are {approximately}2.0 eV for impurity-hydrogen complexes.

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6 p.

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OSTI as DE96003066

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96003066
  • Report No.: SAND--95-2700C
  • Report No.: CONF-951155--8
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 192551
  • Archival Resource Key: ark:/67531/metadc664773

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  • December 1, 1995

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • June 23, 2016, 12:18 p.m.

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Abernathy, C.R.; Pearton, S.J.; MacKenzie, J.D.; Lee, J.W.; Vartuli, C.B.; Wilson, R.G. et al. Role of C, O and H in III-V nitrides, article, December 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664773/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.