Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part I. GaAs, GaSb and AlGaAs

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High density plasma etching of GaAs, GaSb and AIGaAs was performed in IC1/Ar and lBr/Ar chemistries using an Inductively Coupled Plasma (ICP) source. GaSb and AlGaAs showed maxima in their etch rates for both plasma chemistries as a function of interhalogen percentage, while GaAs showed increased etch rates with plasma composition in both chemistries. Etch rates of all materials increased substantially with increasing rf chuck power, but rapidly decreased with chamber pressure. Selectivities > 10 for GaAs and GaSb over AlGaAs were obtained in both chemistries. The etched surfaces of GaAs showed smooth morphology, which were somewhat better with IC1/Ar ... continued below

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Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B. et al. November 23, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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High density plasma etching of GaAs, GaSb and AIGaAs was performed in IC1/Ar and lBr/Ar chemistries using an Inductively Coupled Plasma (ICP) source. GaSb and AlGaAs showed maxima in their etch rates for both plasma chemistries as a function of interhalogen percentage, while GaAs showed increased etch rates with plasma composition in both chemistries. Etch rates of all materials increased substantially with increasing rf chuck power, but rapidly decreased with chamber pressure. Selectivities > 10 for GaAs and GaSb over AlGaAs were obtained in both chemistries. The etched surfaces of GaAs showed smooth morphology, which were somewhat better with IC1/Ar than with IBr/& discharge. Auger Electron Spectroscopy analysis revealed equi-rate of removal of group III and V components or the corresponding etch products, maintaining the stoichiometry of the etched surface.

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  • Journal Name: Plasma Chemistries and Plasma Processes

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  • Other: DE00001960
  • Report No.: SAND98-2614J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1960
  • Archival Resource Key: ark:/67531/metadc664729

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  • November 23, 1998

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  • June 29, 2015, 9:42 p.m.

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  • Nov. 29, 2016, 2:55 p.m.

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Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B. et al. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part I. GaAs, GaSb and AlGaAs, article, November 23, 1998; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc664729/: accessed May 27, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.