OBIC analysis of stressed, thermally-isolated polysilicon resistors

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High gain Optical Beam Induced Current (OBIC) imaging has been used for the first time to examine the internal structural effects of electrical stress on thermally-isolated polysilicon resistors. The resistors are examined over a wide range of current densities, producing Joule heating up to {approximately}1200{degrees}C. Throughout this current density range, the OBIC images indicate a clustering of dopant under dc stress and a more uniform distribution under ac conditions. The OBIC images also reveal areas that are precursors to catastrophic resistor failure. In addition to OBIC imaging, conventional electrical measurements were performed, examining the polysilicon resistance degradation and time-to-failure as ... continued below

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10 p.

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Cole, E.I. Jr.; Peterson, K.A.; Campbell, A.N.; Snyder, E.S.; Pierce, D.G.; Suehle, J.S. et al. December 31, 1994.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

High gain Optical Beam Induced Current (OBIC) imaging has been used for the first time to examine the internal structural effects of electrical stress on thermally-isolated polysilicon resistors. The resistors are examined over a wide range of current densities, producing Joule heating up to {approximately}1200{degrees}C. Throughout this current density range, the OBIC images indicate a clustering of dopant under dc stress and a more uniform distribution under ac conditions. The OBIC images also reveal areas that are precursors to catastrophic resistor failure. In addition to OBIC imaging, conventional electrical measurements were performed, examining the polysilicon resistance degradation and time-to-failure as a function of electrical stress. The electrical measurements show a monotonic increase in polysilicon resistor lifetime with frequency (up to 2 kHz) when subjected to a bipolar ac stress. The enhanced lifetime was observed even under high temperature (from Joule heating) stress conditions previously reported to be electromigration-free. The dopant redistribution indicated by the OBIC images is consistent with an electromigration stress experienced by the polysilicon resistors. The implications for thermally-isolated polysilicon resistor reliability are examined briefly.

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10 p.

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OSTI as DE95008511

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  • International reliability physics symposium, Las Vegas, NV (United States), 3-6 Apr 1995

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  • Other: DE95008511
  • Report No.: SAND--94-2464C
  • Report No.: CONF-950432--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 26615
  • Archival Resource Key: ark:/67531/metadc664344

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  • December 31, 1994

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • June 24, 2016, 1:22 p.m.

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Cole, E.I. Jr.; Peterson, K.A.; Campbell, A.N.; Snyder, E.S.; Pierce, D.G.; Suehle, J.S. et al. OBIC analysis of stressed, thermally-isolated polysilicon resistors, article, December 31, 1994; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664344/: accessed July 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.