III-Nitride ion implantation and device processing

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Ion implantation doping and isolation has played a critical role in realizing high performance photonic and electronic devices in all mature semiconductor materials; this is also expected for binary III-Nitride materials (InN, GaN, AlN) and their alloys as epitaxy improves and more advanced device structures fabricated. This paper reports on recent progress in ion implantation doping of III-Nitride materials that has led to the first demonstration of a GaN JFET (junction field effect transistor). The JFET was fabricated with all ion implantation doping; in particular, p-type doping of GaN with Ca has been demonstrated with an estimated acceptor ionization energy ... continued below

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10 p.

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Zolper, J.C.; Shul, R.J.; Baca, A.G.; Pearton, S.J.; Abernathy, C.R.; Wilson, R.G. et al. June 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Ion implantation doping and isolation has played a critical role in realizing high performance photonic and electronic devices in all mature semiconductor materials; this is also expected for binary III-Nitride materials (InN, GaN, AlN) and their alloys as epitaxy improves and more advanced device structures fabricated. This paper reports on recent progress in ion implantation doping of III-Nitride materials that has led to the first demonstration of a GaN JFET (junction field effect transistor). The JFET was fabricated with all ion implantation doping; in particular, p-type doping of GaN with Ca has been demonstrated with an estimated acceptor ionization energy of 169 meV. O-implantation has also been studied and shown to yield n-type conduction with an ionization energy of {similar_to}29 meV. Neither Ca or O display measurable redistribution during a 1125 C, 15 s activation anneal which sets an upper limit on their diffusivity at this temperature of 2.7{times}10{sup {minus}13}cm{sup 2}/s.

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10 p.

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OSTI as DE96011840

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  • 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996

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  • Other: DE96011840
  • Report No.: SAND--96-1407C
  • Report No.: CONF-960502--16
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/432983 | External Link
  • Office of Scientific & Technical Information Report Number: 242674
  • Archival Resource Key: ark:/67531/metadc664283

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  • June 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 8:33 p.m.

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Zolper, J.C.; Shul, R.J.; Baca, A.G.; Pearton, S.J.; Abernathy, C.R.; Wilson, R.G. et al. III-Nitride ion implantation and device processing, article, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664283/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.