Ohmic contacts to Si-implanted and un-implanted n-type GaN

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We report on ohmic contacts to Si-implanted and un-implanted n-type GaN on sapphire. A ring shaped contact design avoids the need to isolate the contact structures by additional implantation or etching. Metal layers of Al and Ti/Al were investigated. On un-implanted GaN, post metalization annealing was performed in an RTA for 30 seconds in N{sub 2} at 700, 800, and 900 C. A minimum specific contact resistance (r{sub c}) of 1.4{times}10{sup -5} {Omega}{minus}cm{sup 2} was measured for Ti/Al at an annealing temperature of 800 C. Although these values are reasonably low, variations of 95% in specific contact resistance were measured ... continued below

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6 p.

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Brown, J.; Ramer, J.; Zheng, L. F.; Hersee, S. D. & Zolper, J. February 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We report on ohmic contacts to Si-implanted and un-implanted n-type GaN on sapphire. A ring shaped contact design avoids the need to isolate the contact structures by additional implantation or etching. Metal layers of Al and Ti/Al were investigated. On un-implanted GaN, post metalization annealing was performed in an RTA for 30 seconds in N{sub 2} at 700, 800, and 900 C. A minimum specific contact resistance (r{sub c}) of 1.4{times}10{sup -5} {Omega}{minus}cm{sup 2} was measured for Ti/Al at an annealing temperature of 800 C. Although these values are reasonably low, variations of 95% in specific contact resistance were measured within a 500 {mu}m distance on the wafer. These results are most likely caused by the presence of compensating hydrogen. Specific contact resistance variation was reduced from 95 to 10% by annealing at 900 C prior to metalization. On Si-implanted GaN, un-annealed ohmic contacts were formed with Ti/Al metalization. The implant activation anneal of 1120 C generates nitrogen vacancies that leave the surface heavily n-type, which makes un-annealed ohmic contacts with low contact resistivity possible.

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6 p.

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OSTI as DE96007664

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96007664
  • Report No.: SAND--96-0218C
  • Report No.: CONF-951155--47
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 205071
  • Archival Resource Key: ark:/67531/metadc664243

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  • February 1996

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  • June 29, 2015, 9:42 p.m.

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  • Jan. 14, 2016, 6:14 p.m.

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Brown, J.; Ramer, J.; Zheng, L. F.; Hersee, S. D. & Zolper, J. Ohmic contacts to Si-implanted and un-implanted n-type GaN, article, February 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664243/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.