Irradiation study on GEM IPC preamp/shaper

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Description

The Preamplifier/Shaper Integrated Circuit for the GEM Interpolating Pad Chamber (IPC), designed by Paul. O`Connor, Brookhaven National Laboratory is for amplifying the charge signal from the Pad cathodes into a voltage pulse which goes to the Analog Random Access Memory (ARAM) integrated circuit. The GEM IPC integrated circuit has a SemiGaussian voltage pulse output with a 30ns shaping time. The integrated circuits were fabricated using Harris Semiconductors AVLSI1-RA process in-order for the electronics on the wafer to survive up to 2 mad of ionizing radiation during its operation life time. The details of the electronics on the GEM IPC integrated ... continued below

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18 p.

Creation Information

Kandasamy, A. January 1, 1995.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this report can be viewed below.

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Description

The Preamplifier/Shaper Integrated Circuit for the GEM Interpolating Pad Chamber (IPC), designed by Paul. O`Connor, Brookhaven National Laboratory is for amplifying the charge signal from the Pad cathodes into a voltage pulse which goes to the Analog Random Access Memory (ARAM) integrated circuit. The GEM IPC integrated circuit has a SemiGaussian voltage pulse output with a 30ns shaping time. The integrated circuits were fabricated using Harris Semiconductors AVLSI1-RA process in-order for the electronics on the wafer to survive up to 2 mad of ionizing radiation during its operation life time. The details of the electronics on the GEM IPC integrated circuits is explained in the design memorandum by Paul. O`Connor. The purpose of this study is to determine the ability of the electronics on this IC fabricated using the above process to withstand ionizing radiation up to the above mentioned dose level.

Physical Description

18 p.

Notes

INIS; OSTI as DE95007307

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  • Other Information: PBD: Jan 1995

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  • Other: DE95007307
  • Report No.: BNL--61333
  • Grant Number: AC02-76CH00016
  • DOI: 10.2172/28413 | External Link
  • Office of Scientific & Technical Information Report Number: 28413
  • Archival Resource Key: ark:/67531/metadc664200

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • January 1, 1995

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

Description Last Updated

  • Dec. 1, 2015, 4:18 p.m.

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Kandasamy, A. Irradiation study on GEM IPC preamp/shaper, report, January 1, 1995; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc664200/: accessed November 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.