New insight into damage-related phenomena in Si implanted under extreme conditions Metadata

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Title

  • Main Title New insight into damage-related phenomena in Si implanted under extreme conditions

Creator

  • Author: Holland, O. W.
    Creator Type: Personal
  • Author: Budai, J. D.
    Creator Type: Personal
  • Author: Nielsen, B.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)

Publisher

  • Name: Oak Ridge National Laboratory
    Place of Publication: Tennessee
    Additional Info: Oak Ridge National Lab., TN (United States)
  • Name: Brookhaven National Laboratory
    Place of Publication: Upton, New York
    Additional Info: Brookhaven National Lab., Upton, NY (United States)

Date

  • Creation: 1996-01

Language

  • English

Description

  • Content Description: New insight into damage formation in Si(100) during self-ion irradiation is gained from processing under extreme conditions. Dislocations form in the near-surface as a result of lattice relaxation in response to strain produced by precursor defects which are shown to be vacancy-type by positron analysis. A model to account for these defects and their distribution is presented. A novel technique is demonstrated which utilizes a subsequent implantation as a depth specific probe to manipulate the vacancy-type defects. Aspects of damage growth which emerge from the probe results are discussed.
  • Physical Description: 7 p.

Subject

  • Keyword: Physical Radiation Effects
  • Keyword: Irradiation
  • Keyword: Ion Implantation
  • STI Subject Categories: 36 Materials Science
  • Keyword: Crystal Defects
  • Keyword: Dislocations
  • Keyword: Mathematical Models
  • Keyword: Microstructure
  • Keyword: Relaxation
  • Keyword: Silicon
  • Keyword: Monocrystals
  • Keyword: Electrical Properties

Source

  • Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE96008103
  • Report No.: CONF-951155--110
  • Grant Number: AC05-96OR22464;AC02-76CH00016
  • Office of Scientific & Technical Information Report Number: 219506
  • Archival Resource Key: ark:/67531/metadc664076

Note

  • Display Note: INIS; OSTI as DE96008103