New insight into damage-related phenomena in Si implanted under extreme conditions Metadata

Metadata describes a digital item, providing (if known) such information as creator, publisher, contents, size, relationship to other resources, and more. Metadata may also contain "preservation" components that help us to maintain the integrity of digital files over time.


  • Main Title New insight into damage-related phenomena in Si implanted under extreme conditions


  • Author: Holland, O. W.
    Creator Type: Personal
  • Author: Budai, J. D.
    Creator Type: Personal
  • Author: Nielsen, B.
    Creator Type: Personal


  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)


  • Name: Oak Ridge National Laboratory
    Place of Publication: Tennessee
    Additional Info: Oak Ridge National Lab., TN (United States)
  • Name: Brookhaven National Laboratory
    Place of Publication: Upton, New York
    Additional Info: Brookhaven National Lab., Upton, NY (United States)


  • Creation: 1996-01


  • English


  • Content Description: New insight into damage formation in Si(100) during self-ion irradiation is gained from processing under extreme conditions. Dislocations form in the near-surface as a result of lattice relaxation in response to strain produced by precursor defects which are shown to be vacancy-type by positron analysis. A model to account for these defects and their distribution is presented. A novel technique is demonstrated which utilizes a subsequent implantation as a depth specific probe to manipulate the vacancy-type defects. Aspects of damage growth which emerge from the probe results are discussed.
  • Physical Description: 7 p.


  • Keyword: Physical Radiation Effects
  • Keyword: Irradiation
  • Keyword: Ion Implantation
  • STI Subject Categories: 36 Materials Science
  • Keyword: Crystal Defects
  • Keyword: Dislocations
  • Keyword: Mathematical Models
  • Keyword: Microstructure
  • Keyword: Relaxation
  • Keyword: Silicon
  • Keyword: Monocrystals
  • Keyword: Electrical Properties


  • Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995


  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI


  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article


  • Text


  • Other: DE96008103
  • Report No.: CONF-951155--110
  • Grant Number: AC05-96OR22464;AC02-76CH00016
  • Office of Scientific & Technical Information Report Number: 219506
  • Archival Resource Key: ark:/67531/metadc664076


  • Display Note: INIS; OSTI as DE96008103