Ion implantation for high performance III-V JFETS and HFETS

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Ion implantation has been an enabling technology for realizing many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing for GaAs JFETs (joint field effect transistors), AlGaAs/GaAs HFETs (heterostructure field effect transistors), and InGaP or InAlP-barrier HFETs. The GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs are reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on donor ionization ... continued below

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11 p.

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Zolper, J.C.; Baca, A.G.; Sherwin, M.E. & Klem, J.F. June 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Ion implantation has been an enabling technology for realizing many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing for GaAs JFETs (joint field effect transistors), AlGaAs/GaAs HFETs (heterostructure field effect transistors), and InGaP or InAlP-barrier HFETs. The GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs are reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to absence of the deep donor level. An optimized P co- implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

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11 p.

Notes

OSTI as DE96010992

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96010992
  • Report No.: SAND--96-1118C
  • Report No.: CONF-960401--33
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 238349
  • Archival Resource Key: ark:/67531/metadc664032

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  • June 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 13, 2016, 2:41 p.m.

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Zolper, J.C.; Baca, A.G.; Sherwin, M.E. & Klem, J.F. Ion implantation for high performance III-V JFETS and HFETS, article, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664032/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.