Reduced polarization decay due to carrier in-scattering in a semiconductor active medium

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The in-scattering processes, which reduce the decay of the active medium polarization, should be included in a consistent treatment of semiconductor laser gain. The in-scattering processes affect the laser gain by decreasing the influence of the high k-states, which contribute absorption to the spectrum. A theory, based on the semiconductor-Bloch equations with the effects of carrier-carrier scattering treated at the level of the quantum kinetic equations in the Markov limit, predicts gain spectra that do not exhibit absorption below the renormalized band gap, in agreement with experiment. When compared to gain calculations where the in-scattering contribution is neglected, the theory ... continued below

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8 p.

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Hughes, S.; Knorr, A.; Koch, S.W. & Chow, W.W. July 1, 1996.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The in-scattering processes, which reduce the decay of the active medium polarization, should be included in a consistent treatment of semiconductor laser gain. The in-scattering processes affect the laser gain by decreasing the influence of the high k-states, which contribute absorption to the spectrum. A theory, based on the semiconductor-Bloch equations with the effects of carrier-carrier scattering treated at the level of the quantum kinetic equations in the Markov limit, predicts gain spectra that do not exhibit absorption below the renormalized band gap, in agreement with experiment. When compared to gain calculations where the in-scattering contribution is neglected, the theory predicts markedly different properties for intrinsic laser parameters, such as peak gain, gain bandwidth, differential gain and carrier density at transparency, especially at low carrier densities.

Physical Description

8 p.

Notes

OSTI as DE96012945

Source

  • CLEO/QUELS `96: 16. annual conference on lasers and electro-optics and 6th quantum electronics and laser science conference: shedding new light on universal applications, Anaheim, CA (United States), 2-7 Jun 1996

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  • Other: DE96012945
  • Report No.: SAND--96-1656C
  • Report No.: CONF-960642--17
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 266739
  • Archival Resource Key: ark:/67531/metadc664008

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  • July 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 9:16 p.m.

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Hughes, S.; Knorr, A.; Koch, S.W. & Chow, W.W. Reduced polarization decay due to carrier in-scattering in a semiconductor active medium, article, July 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664008/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.