Properties and orientation of antiferroelectric lead zirconate thin films grown by MOCVD.

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Single-phase polycrystalline PbZrO{sub 3} (PZ) thin films, 3000-6000 {angstrom} thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO{sub 2}/Si substrates at {approximately}525 C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO{sub 2}/Si (Pt/Ti/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 {angstrom} thick PbTiO{sub 3} (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO{sub 2} template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.03-0.01. The PZ ... continued below

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9 p.

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Chen, N. December 21, 1998.

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Description

Single-phase polycrystalline PbZrO{sub 3} (PZ) thin films, 3000-6000 {angstrom} thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO{sub 2}/Si substrates at {approximately}525 C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO{sub 2}/Si (Pt/Ti/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 {angstrom} thick PbTiO{sub 3} (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO{sub 2} template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.03-0.01. The PZ films with (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase with a polarization of {approx}34 {micro}C/cm{sup 2}, and the energy that was stored during switching was 7.1 J/cm{sup 3}. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 350 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

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9 p.

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OSTI as DE00010859

Medium: P; Size: 9 pages

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  • Materials Research Society, Boston, MA (US), 11/30/1998--12/04/1998

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  • Report No.: ANL/MSD/CP-96706
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 10859
  • Archival Resource Key: ark:/67531/metadc628414

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  • December 21, 1998

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  • June 16, 2015, 7:43 a.m.

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  • April 11, 2017, 9:03 p.m.

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Chen, N. Properties and orientation of antiferroelectric lead zirconate thin films grown by MOCVD., article, December 21, 1998; Illinois. (digital.library.unt.edu/ark:/67531/metadc628414/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.