Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

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The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage ... continued below

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5 p.

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MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES et al. December 17, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

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5 p.

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OSTI as DE00015187

Medium: P; Size: 5 pages

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  • Journal Name: IEEE Transactions on Plasma Science; Other Information: Submitted to IEEE Transactions on Plasma Science

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  • Report No.: SAND99-3189J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 15187
  • Archival Resource Key: ark:/67531/metadc627922

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  • December 17, 1999

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  • June 16, 2015, 7:43 a.m.

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  • April 11, 2017, 12:19 p.m.

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MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES et al. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches, article, December 17, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc627922/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.