Triangular step instability and 2D/3D transition during the growth of strained Ge films on Si(100)

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We show that an activation energy barrier exists to the formation of wavy step edges due to stress-driven 2D instability. The barrier height and the barrier width depend sensitively on the surface stress anisotropy and step free energy. The large misfit strain of Ge films significantly reduces the barrier by lowering the S{sub B} step energy, inducing S{sub A} steps to undergo a triangular instability even during low temperature growth of Ge on Si(100). The step instability results in a novel arrangement of stress domains, and the interaction between the domains causes a spatial variation of surface strain with a ... continued below

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7 p.

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Chen, K.M.; Jesson, D.E.; Pennycook, S.J.; Mostoller, M.; Kaplan, T.; Thundat, T. et al. April 1, 1995.

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We show that an activation energy barrier exists to the formation of wavy step edges due to stress-driven 2D instability. The barrier height and the barrier width depend sensitively on the surface stress anisotropy and step free energy. The large misfit strain of Ge films significantly reduces the barrier by lowering the S{sub B} step energy, inducing S{sub A} steps to undergo a triangular instability even during low temperature growth of Ge on Si(100). The step instability results in a novel arrangement of stress domains, and the interaction between the domains causes a spatial variation of surface strain with a surprisingly large influence on the energy barrier for island nucleation. Calculations indicate a dramatic enhancement in the nucleation of 3D islands at the apex regions of triangular steps, in good agreement with our experimental measurements.

Physical Description

7 p.

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OSTI as DE95014261

Medium: P; Size: 7 p.

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95014261
  • Report No.: CONF-950412--51
  • Grant Number: AC05-84OR21400
  • Office of Scientific & Technical Information Report Number: 100226
  • Archival Resource Key: ark:/67531/metadc627697

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  • April 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 13, 2017, 12:49 p.m.

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Chen, K.M.; Jesson, D.E.; Pennycook, S.J.; Mostoller, M.; Kaplan, T.; Thundat, T. et al. Triangular step instability and 2D/3D transition during the growth of strained Ge films on Si(100), article, April 1, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc627697/: accessed September 26, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.