Effects of reliability screens of MOS charge trapping

PDF Version Also Available for Download.

Description

The effects of pre-irradiation elevated-temperature bias stresses on the radiation hardness of field-oxide transistors have been investigated as a function of stress temperature, time, and bias. Both the stress temperature and time are found to have a significant impact on radiation-induced charge buildup in these transistors. Specifically, an increase in either the stress temperature or time causes a much larger negative shift (towards depletion) in the I-V characteristics of the n-channel field-oxide transistors. This increased shift in the transistor I-V characteristics with stress temperature and time suggests that the mechanisms responsible for the stress effects are thermally activated. An activation ... continued below

Physical Description

10 p.

Creation Information

Shanneyfelt, M.R.; Winokur, P.S.; Fleetwood, D.M.; Schwank, J.R. & Reber, R.A. Jr. September 1, 1995.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The effects of pre-irradiation elevated-temperature bias stresses on the radiation hardness of field-oxide transistors have been investigated as a function of stress temperature, time, and bias. Both the stress temperature and time are found to have a significant impact on radiation-induced charge buildup in these transistors. Specifically, an increase in either the stress temperature or time causes a much larger negative shift (towards depletion) in the I-V characteristics of the n-channel field-oxide transistors. This increased shift in the transistor I-V characteristics with stress temperature and time suggests that the mechanisms responsible for the stress effects are thermally activated. An activation energy of {approximately}0.38 eV was measured. The stress bias was found to have no impact on radiation-induced charge buildup in these transistors. The observed stress temperature, time, and bias dependencies appears to be consistent with the diffusion of molecular hydrogen during a given stress period. These results have important implications for the development of hardness assurance test methods.

Physical Description

10 p.

Notes

OSTI as DE95017838

Source

  • 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE95017838
  • Report No.: SAND--95-0514C
  • Report No.: CONF-9509107--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 105061
  • Archival Resource Key: ark:/67531/metadc627639

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • September 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • April 13, 2016, 1:39 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 5

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Shanneyfelt, M.R.; Winokur, P.S.; Fleetwood, D.M.; Schwank, J.R. & Reber, R.A. Jr. Effects of reliability screens of MOS charge trapping, article, September 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc627639/: accessed September 26, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.