P-type silicon drift detectors

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Preliminary results on 16 CM{sup 2}, position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 {times} l0{sup 6} s{sup {minus}1} is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 {mu}m to 1200 {mu}m. A new method of using ion-implanted ... continued below

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22 p.

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Walton, J.T.; Krieger, B.; Krofcheck, D.; O`Donnell, R.; Odyniec, G.; Partlan, M.D. et al. June 1, 1995.

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Preliminary results on 16 CM{sup 2}, position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 {times} l0{sup 6} s{sup {minus}1} is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 {mu}m to 1200 {mu}m. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed.

Physical Description

22 p.

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INIS; OSTI as DE96001120

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  • 7. European symposium on semiconductor detectors, new developments in radiation detectors, Munich (Germany), 7-10 May 1995

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  • Other: DE96001120
  • Report No.: LBL--37243
  • Report No.: CONF-9505291--1
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 114024
  • Archival Resource Key: ark:/67531/metadc627542

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 5, 2016, 12:02 p.m.

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Walton, J.T.; Krieger, B.; Krofcheck, D.; O`Donnell, R.; Odyniec, G.; Partlan, M.D. et al. P-type silicon drift detectors, article, June 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc627542/: accessed September 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.