High silicon content silylating reagents for dry-developed positive-tone resists for extreme ultraviolet (13.5 nm) and deep ultraviolet (248 nm) microlithography

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Recent results in the use of disilanes as silylating reagents for near-surface imaging with deep-UV (248 nm) and EUV (13.5 nm) lithography are reported. A relatively thin imaging layer of a photo-cross-linking resist is spun over a thicker layer of hard-baked resist that functions as a planarizing layer and antireflective coating. Photoinduced acid generation and subsequent heating crosslinks and renders exposed areas impermeable to an aminodisilane that reacts with the unexposed regions. Subsequent silylation and reactive ion etching afford a positive-tone image. The use of disilanes introduces a higher concentration of silicon into the polymer than is possible with silicon ... continued below

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20 p.

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Wheeler, D.; Scharrer, E. & Kubiak, G. December 31, 1994.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Recent results in the use of disilanes as silylating reagents for near-surface imaging with deep-UV (248 nm) and EUV (13.5 nm) lithography are reported. A relatively thin imaging layer of a photo-cross-linking resist is spun over a thicker layer of hard-baked resist that functions as a planarizing layer and antireflective coating. Photoinduced acid generation and subsequent heating crosslinks and renders exposed areas impermeable to an aminodisilane that reacts with the unexposed regions. Subsequent silylation and reactive ion etching afford a positive-tone image. The use of disilanes introduces a higher concentration of silicon into the polymer than is possible with silicon reagents that incorporate only one silicon atom per reactive site. The higher silicon content in the silylated polymer increases etching selectivity between exposed and unexposed regions and thereby increases the contrast. Additional improvements that help to minimize flow during silylation are also discussed, including the addition of bifunctional disilanes. We have resolved high aspect ratio, very high quality 0.20 {mu}m line and space patterns at 248 nm with a stepper having a numerical aperture (NA)= 0.53, and have resolved {<=} 0.15 {mu}m line and spaces at 13.5 nm.

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20 p.

Notes

OSTI as DE96001724

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  • Radiation effects on polymers, Washington, DC (United States), 9-11 Sep 1994

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  • Other: DE96001724
  • Report No.: SAND--95-2194C
  • Report No.: CONF-9409376--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 116680
  • Archival Resource Key: ark:/67531/metadc627475

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 31, 1994

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 13, 2016, 2:09 p.m.

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Wheeler, D.; Scharrer, E. & Kubiak, G. High silicon content silylating reagents for dry-developed positive-tone resists for extreme ultraviolet (13.5 nm) and deep ultraviolet (248 nm) microlithography, article, December 31, 1994; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc627475/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.