Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links

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Description

Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers and designed to operate from 980 nm to over 1.3 {mu}m and interface directly with 3.3 V CMOS. SPICE was utilized to investigate circuit topographies that minimize power dissipation while maintaining large signal operation required to interface directly with CMOS. Low-power dissipation of {approximately}10 mW/channel has been achieved at bit rates up to 800 Mbits/sec. Performance characteristics of discrete HBTs and of low-power photoreceivers fabricated with p-i-n/HBT circuits are reported.

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6 p.

Creation Information

Lovejoy, M.L.; Patrizi, G.A. & Enquist, P.M. September 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers and designed to operate from 980 nm to over 1.3 {mu}m and interface directly with 3.3 V CMOS. SPICE was utilized to investigate circuit topographies that minimize power dissipation while maintaining large signal operation required to interface directly with CMOS. Low-power dissipation of {approximately}10 mW/channel has been achieved at bit rates up to 800 Mbits/sec. Performance characteristics of discrete HBTs and of low-power photoreceivers fabricated with p-i-n/HBT circuits are reported.

Physical Description

6 p.

Notes

OSTI as DE95017549

Source

  • IEEE gallium arsenide integrated circuits symposium: integrated circuits in GaAs, InP, and other compound semiconductors, San Diego, CA (United States), 29 Oct - 1 Nov 1995

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  • Other: DE95017549
  • Report No.: SAND--95-1299C
  • Report No.: CONF-951097--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 102409
  • Archival Resource Key: ark:/67531/metadc626667

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  • September 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 4:16 p.m.

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Lovejoy, M.L.; Patrizi, G.A. & Enquist, P.M. Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links, article, September 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc626667/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.