Acoustic Wave Chemical Microsensors in GaAs

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Description

High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature ... continued below

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8 Pages

Creation Information

Baca, Albert G.; Heller, Edwin J.; Frye-Mason, Gregory C.; Reno, John L.; Kottenstette, Richard; Casalnuovo, Stephen A. et al. September 20, 1998.

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Description

High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

Physical Description

8 Pages

Source

  • 1998 SPIE Symposium on Micromachining and Microfabrication Symposium; San Jose, CA USA; 09/20/1998

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  • Other: DE00001261
  • Report No.: SAND98-1925C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1261
  • Archival Resource Key: ark:/67531/metadc626517

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 20, 1998

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  • June 16, 2015, 7:43 a.m.

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Baca, Albert G.; Heller, Edwin J.; Frye-Mason, Gregory C.; Reno, John L.; Kottenstette, Richard; Casalnuovo, Stephen A. et al. Acoustic Wave Chemical Microsensors in GaAs, article, September 20, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc626517/: accessed April 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.