STM and AFM of CVD-diamond and diamond-like carbon thin films

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Insulating polycrystalline diamond films grown by chemical vapor deposition (CVD) are semiconducting diamond-like carbon (DLC) films grown by laser-ablation have been studied using STM and AFM as well as other complementary techniques. Issues relating to the STM technique as well as the materials properties of these films have been explored. In a novel approach, photo-induced bulk carrier transport using a xenon arc lamp providing broadband radiation ({lambda} = 180--700 nm) was used successfully to establish bulk conduction for STM imaging of the insulating films. Comparisons of topographic STM images with AFM images acquired on the same samples demonstrated the ability ... continued below

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9 p.

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Mercer, T.W.; Carroll, D.L.; Liang, Yong; Bonnell, D.; Friedmann, T.A.; Siegal, M.P. et al. December 31, 1994.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Insulating polycrystalline diamond films grown by chemical vapor deposition (CVD) are semiconducting diamond-like carbon (DLC) films grown by laser-ablation have been studied using STM and AFM as well as other complementary techniques. Issues relating to the STM technique as well as the materials properties of these films have been explored. In a novel approach, photo-induced bulk carrier transport using a xenon arc lamp providing broadband radiation ({lambda} = 180--700 nm) was used successfully to establish bulk conduction for STM imaging of the insulating films. Comparisons of topographic STM images with AFM images acquired on the same samples demonstrated the ability to correlate sub-micrometer structures observed in the images. This capability opens up the possibility that local electronic surface structure can be measured with STS. Preliminary tunneling spectra acquired on semiconducting DLC films demonstrated that illumination promotes the occupation of new electronic states resulting in a reduction of the observed energy gap at the surface. Images of DLC samples grown under a variety of conditions are providing new information into the preparation and growth parameters required to obtain the best quality films and their integrity after thermal cycling and other post-fabrication treatments.

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9 p.

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OSTI as DE95015437

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  • Atomic force scanning tunneling microscopy symposium, Natick, MA (United States), 7-9 Jun 1994

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  • Other: DE95015437
  • Report No.: SAND--94-1486C
  • Report No.: CONF-9406268--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 102490
  • Archival Resource Key: ark:/67531/metadc626481

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 31, 1994

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  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 12:54 p.m.

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Mercer, T.W.; Carroll, D.L.; Liang, Yong; Bonnell, D.; Friedmann, T.A.; Siegal, M.P. et al. STM and AFM of CVD-diamond and diamond-like carbon thin films, article, December 31, 1994; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc626481/: accessed October 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.