In-Situ Sensors for Process Control of CuIn(Ga)Se2 Module Deposition; Annual Technical Report, 15 February 1998-15 February 1999

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Materials Research Group (MRG), Inc., is developing in-situ sensors to improve yield, reproducibility, average efficiency, and prevention of ''lost processes.'' In-situ X-ray fluorescence (XRF) will be used to monitor composition and thickness of deposited layers, and in-situ optical emission spectroscopy (OES) will be used to provide real-time feedback describing the deposition plasma. Characterization techniques are to be examined ex-situ in the first two years of the contract, and applied to existing deposition systems in the final year. Progress toward achieving these goals during Phase I includes: Development and verification of an XRF simulation tool to troubleshoot measurements, to predict difficulties ... continued below

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Bhat, P. K.; Carpenter, B.; Eisgruber, I. L.; Hollingsworth, R.; Marshall, C.; Ogard, J. et al. September 30, 1999.

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Description

Materials Research Group (MRG), Inc., is developing in-situ sensors to improve yield, reproducibility, average efficiency, and prevention of ''lost processes.'' In-situ X-ray fluorescence (XRF) will be used to monitor composition and thickness of deposited layers, and in-situ optical emission spectroscopy (OES) will be used to provide real-time feedback describing the deposition plasma. Characterization techniques are to be examined ex-situ in the first two years of the contract, and applied to existing deposition systems in the final year. Progress toward achieving these goals during Phase I includes: Development and verification of an XRF simulation tool to troubleshoot measurements, to predict difficulties in XRF interpretation, and to calculate quantities needed in the translation from XRF signal to composition; Examination of the implication of sample conditions unique to CIGS photovoltaics - such as varying Ga gradients, intermediate film thicknesses where neither thick-film nor thin-film approximations are valid, variations in back-contact thickness, multiple layers, variations in substrate composition and thickness - on XRF interpretation; Fabrication of CIGS samples and test structures for XRF measurements; Execution and interpretation of XRF measurements examining system accuracy; Design of a prototype XRF sensor built entirely of cost-effective, commercially available components that are suitable for integration into closed-loop deposition control; Evaluation of pulsed DC sputtering of Se; and Interaction with CIS National Team industrial partners to specify and adapt sensor functions.

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OSTI as DE00014424

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  • Other Information: Supercedes report DE00014424; PBD: 30 Sep 1999

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  • Report No.: NREL/SR-520-26382
  • Grant Number: AC36-99GO10337
  • DOI: 10.2172/14424 | External Link
  • Office of Scientific & Technical Information Report Number: 14424
  • Archival Resource Key: ark:/67531/metadc626227

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  • September 30, 1999

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  • June 16, 2015, 7:43 a.m.

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  • March 31, 2016, 8:12 p.m.

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Bhat, P. K.; Carpenter, B.; Eisgruber, I. L.; Hollingsworth, R.; Marshall, C.; Ogard, J. et al. In-Situ Sensors for Process Control of CuIn(Ga)Se2 Module Deposition; Annual Technical Report, 15 February 1998-15 February 1999, report, September 30, 1999; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc626227/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.