ECR etching of group-III nitride binary and ternary films

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Due to their wide band gaps and high dielectric constants, the group III-nitrides have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs) and for their potential use in laser structures and high temperature electronics. Processing of these materials, in particular wet and dry etching, has proven to be extremely difficult due to their inert chemical nature. We report electron cyclotron resonance (ECR) etch rates for GaN, InN, AlN, In{sub (x)}Ga{sub (1-x)}Ni and In{sub (x)}Al{sub (1-x)}N as a function of temperature, rf-power, pressure, and microwave power. Etch conditions are characterized for rate, profile, ... continued below

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14 p.

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Shul, R.J.; Howard, A.J. & Pearton, S.J. October 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 18 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Due to their wide band gaps and high dielectric constants, the group III-nitrides have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs) and for their potential use in laser structures and high temperature electronics. Processing of these materials, in particular wet and dry etching, has proven to be extremely difficult due to their inert chemical nature. We report electron cyclotron resonance (ECR) etch rates for GaN, InN, AlN, In{sub (x)}Ga{sub (1-x)}Ni and In{sub (x)}Al{sub (1-x)}N as a function of temperature, rf-power, pressure, and microwave power. Etch conditions are characterized for rate, profile, and sidewall and surface morphology. Atomic force microscopy (AFM) is used to quantify RMS roughness of the etched surfaces. We observe consistent trends for the InAlN films where the etch rates increase with increasing concentration of In. The trends are far less consistent for the InGaN with a general decrease in etch rate as the In concentration is increased.

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14 p.

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OSTI as DE96000782

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  • 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995

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  • Other: DE96000782
  • Report No.: SAND--95-2101C
  • Report No.: CONF-951007--4
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 110748
  • Archival Resource Key: ark:/67531/metadc626168

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • October 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 3:36 p.m.

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Shul, R.J.; Howard, A.J. & Pearton, S.J. ECR etching of group-III nitride binary and ternary films, article, October 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc626168/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.