W and WSi(x) Ohmic Contacts on p- And n-Type GaN

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W and WSi ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300-1000 *C. There is minimal reaction (< 100 ~ broadening of the metal/GaN interface) even at 1000 *C. Specific contact resistances in the 10-5 f2-cm2 range are obtained for WSiX on Si-implanted GaN with a peak doping concentration of- 5 x 1020 cm-3, after annealing at 950 `C. On p-GaN, leaky Schottky diode behavior is observed for W, WSiX and Ni/Au contacts at room temperature, but true ohmic characteristics are obtained at 250 - 300 *C, where the specific contact resistances are typically ... continued below

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Abernathy, C.R.; Cao, X.A.; Eizenberg, M.; Han, J.; Lothian, J.R.; Pearton, S.J. et al. October 13, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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W and WSi ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300-1000 *C. There is minimal reaction (< 100 ~ broadening of the metal/GaN interface) even at 1000 *C. Specific contact resistances in the 10-5 f2-cm2 range are obtained for WSiX on Si-implanted GaN with a peak doping concentration of- 5 x 1020 cm-3, after annealing at 950 `C. On p-GaN, leaky Schottky diode behavior is observed for W, WSiX and Ni/Au contacts at room temperature, but true ohmic characteristics are obtained at 250 - 300 *C, where the specific contact resistances are typically in the 10-2 K2-cm2 range. The best contacts for W and WSiX are obtained after 700 *C annealing for periods of 30- 120 sees. The formation of &WzN interracial phases appear to be important in determining the contact quality.

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  • Journal Name: Journal of Vacuum Science and Technology A

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  • Other: DE00001377
  • Report No.: SAND98-2301J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1377
  • Archival Resource Key: ark:/67531/metadc626095

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • October 13, 1998

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  • June 16, 2015, 7:43 a.m.

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  • Dec. 8, 2016, 1:48 p.m.

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Abernathy, C.R.; Cao, X.A.; Eizenberg, M.; Han, J.; Lothian, J.R.; Pearton, S.J. et al. W and WSi(x) Ohmic Contacts on p- And n-Type GaN, article, October 13, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc626095/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.