Electron and optical beam testing of integrated circuits using CIVA, LIVA, and LECIVA

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Description

Charge-Induced Voltage Alteration (CIVA), Light-Induced Voltage Alteration, (LIVA), and Low Energy CIVA (LECIVA) are three new failure analysis imaging techniques developed to quickly localize defects on ICs. All three techniques utilize the voltage fluctuations of a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA yield rapid localization of open interconnections on ICs. LIVA allows quick localization of open-circuited and damaged semiconductor junctions. LIVA can also be used to image transistor logic states and can be performed from the backside of ICs with an infrared laser source. The physics of signal ... continued below

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20 p.

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Cole, E.I. Jr. September 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 57 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Charge-Induced Voltage Alteration (CIVA), Light-Induced Voltage Alteration, (LIVA), and Low Energy CIVA (LECIVA) are three new failure analysis imaging techniques developed to quickly localize defects on ICs. All three techniques utilize the voltage fluctuations of a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA yield rapid localization of open interconnections on ICs. LIVA allows quick localization of open-circuited and damaged semiconductor junctions. LIVA can also be used to image transistor logic states and can be performed from the backside of ICs with an infrared laser source. The physics of signal generation for each technique and examples of their use in failure analysis are described.

Physical Description

20 p.

Notes

OSTI as DE95017570

Source

  • 5. European conference on electron and optical beam testing of electronic devices, Wuppertal (Germany), 27-30 Aug 1995

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  • Other: DE95017570
  • Report No.: SAND--95-1946C
  • Report No.: CONF-9508159--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 102394
  • Archival Resource Key: ark:/67531/metadc626063

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • September 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 13, 2016, 1:42 p.m.

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Cole, E.I. Jr. Electron and optical beam testing of integrated circuits using CIVA, LIVA, and LECIVA, article, September 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc626063/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.